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| TK15H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) TK15H50C Switching Regulator Applications * * * * Low drain-source ON resistance Low leakage current Enhancement mode : RDS (ON) = 0. 33 (typ.) High forward transfer admittance : |Yfs| = 8.5 S (typ.) : IDSS = 100 A (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, I45D = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 30 15 60 150 765 15 15 150 -55~150 Unit V V V A A W mJ A mJ C C Pulse (Note 1) 1: GATE 2: DRAIN (HEAT SINK) 3: SOURCE JEDEC JEITA TOSHIBA Weight: 3.8 g (typ.) Drain power dissipation (Tc = 25C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.833 50 Unit C/W C/W Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 5.78 mH, RG = 25 , IAR = 15 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 3 1 2006-11-06 TK15H50C Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Gate-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 15 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 7.0 A VDS = 10 V, ID = 7.0 A Min -- 30 -- 500 2.0 -- 4.0 -- -- -- -- Typ. -- -- -- -- -- 0.33 8.5 2450 15 220 50 Max 10 -- 100 -- 4.0 0.4 -- -- -- -- -- pF Unit A V A V V S Turn-on time Switching time Fall time -- 90 -- ns -- 45 -- Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge -- -- -- -- 175 48 26 22 -- -- -- -- nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition -- -- IDR = 15 A, VGS = 0 V IDR = 15 A, VGS = 0 V dIDR / dt = 100 A / s Min -- -- -- -- -- Typ. -- -- -- 1050 13 Max 15 60 -1.7 -- -- Unit A A V ns C Marking TOSHIBA TK15H50C Part No. (or abbreviation code) Lot No. A line indicates a lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-06 TK15H50C ID - VDS 10 Common source Tc = 25C Pulse test 10 8 6 20 10 ID - VDS Common source Tc = 25C Pulse test Drain current ID (A) 6 5.25 4 5 2 4.75 4.5 VGS = 4 V 0 0 1 2 3 4 5 Drain current ID (A) 8 16 12 6 5.75 8 5.5 5.25 4 5 4.75 4.5 0 0 10 20 30 VGS = 4 V 40 50 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 50 Common source VDS = 20 V Pulse test 10 Tc = -55C VDS - VGS Common source Tc = 25C Pulse test Drain current ID (A) 40 (V) 8 25 VDS Drain-source voltage 6 15 4 8 2 ID = 4 A 0 0 30 100 20 10 0 0 2 4 6 8 10 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID (S) 100 1 Common source VDS = 20 V Pulse test Common source Tc = 25C Pulse test RDS (ON) - ID Forward transfer admittance Yfs Tc = -55C 25 10 100 Drain-source ON resistance RDS (ON) () VGS = 10 V 15 1 1 10 100 0.1 0.1 1 10 100 Drain current ID (A) Drain current ID (A) 3 2006-11-06 TK15H50C RDS (ON) - Tc 1.0 IDR - VDS 100 Common source Tc = 25C Pulse test 0.8 Drain reverse current IDR (A) Drain-source ON resistance RDS (ON) () Common source VGS = 10 V Pulse test 10 0.6 ID = 15 A 0.4 8 4 0.2 1 10 5 3 1 VGS = 0, -1 V -0.6 -0.8 -1.0 -1.2 0 -80 -40 0 40 80 120 160 0.1 0 -0.2 -0.4 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 5 Ciss Vth - Tc Gate threshold voltage Vth (V) (pF) 4 1000 Capacitance C 3 Coss 2 100 Common source VGS = 0 V f = 1 MHz Tc = 25C 10 0.1 1 10 1 Crss 100 0 -80 Common source VDS = 10 V ID = 1 mA Pulse test -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 200 500 Dynamic input/output characteristics VDS (V) Common source ID = 15 A Tc = 25C Pulse test VDS 20 PD 150 400 400 16 Drain-source voltage Drain power dissipation 300 VDS = 100 V 200 400 12 100 200 200 8 50 100 VGS VDS = 100 V 4 0 0 0 40 80 120 160 200 0 20 40 60 80 0 100 Case temperature Tc (C) Total gate charge Qg (nC) 4 2006-11-06 Gate-source voltage VGS (V) (W) TK15H50C rth - tw 10 Normalized transient thermal impedance 1 rth (t)/Rth (ch-c) Duty = 0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 10 0.01 100 1m 10m 100m PDM t T Duty = t/T Rth (ch-c) = 0.833C/W 1 10 Pulse width tw (s) SAFE OPERATING AREA 1000 1000 EAS - Tch 100 ID max (pulse) * ID max (continuous) 100 s * EAS (mJ) Avalanche energy 1000 800 ID (A) 10 Drain current DC OPERATION Tc = 25C 1 ms * 600 1 400 * Single pulse Ta = 25 0.1 Curves must be derated linearly with increase in temperature. 1 10 200 VDSS max 0 25 0.01 100 50 75 100 125 150 Drain-source voltage VDS (V) Channel temperature (initial) Tch (C) 15 V -15 V BVDSS IAR VDD Test circuit Waveform AS = 1 B VDSS L I2 B 2 - VDD VDSS VDS RG = 25 VDD = 90 V, L = 5.78 mH 5 2006-11-06 TK15H50C 6 2006-11-06 |
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